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KMB8D0P30QA 데이터시트(PDF) 1 Page - KEC(Korea Electronics) |
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KMB8D0P30QA 데이터시트(HTML) 1 Page - KEC(Korea Electronics) |
1 / 4 page 2009. 6. 15 1/4 SEMICONDUCTOR TECHNICAL DATA KMB8D0P30QA P-Ch Trench MOSFET Revision No : 0 GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for Load Switch and Battery pack. FEATURES ・V DSS=-30V, ID=-8A. ・Drain to Source On Resistance. RDS(ON)=20mΩ(Max.) @ VGS=-10V RDS(ON)=35mΩ(Max.) @ VGS=-4.5V MOSFET Maximum Ratings (Ta=25 ℃ Unless otherwise noted) FLP-8 0.20+0.1/-0.05 P T 1.27 U 0.1 MAX MILLIMETERS 0.4 0.1 0.15+0.1/-0.05 4.85 0.2 B2 G H L D A B1 DIM 6.02 0.3 1.63 0.2 0.65 0.2 3.94 0.2 + _ + _ + _ + _ + _ + _ G H B1 B2 1 4 5 8 A P D L T U Note1) Surface Mounted on 1 ″×1″FR4 Board, t≤10sec. 1 2 3 4 8 7 6 5 S S S G D D D D 1 2 3 4 8 7 6 5 KMB8D0P 30QA PIN CONNECTION (TOP VIEW) CHARACTERISTIC SYMBOL RATING UNIT Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS ±20 V Drain Current DC@Ta=25 ℃ (Note 1) ID -8 A Pulsed IDP -40 A Drain Power Dissipation @Ta=25 ℃ (Note 1) PD 2.5 W Maximum Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55~150 ℃ Thermal Resistance, Junction to Ambient (Note 1) RthJA 50 ℃/W |
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