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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRF2805PBF 데이터시트(PDF) 1 Page - International Rectifier |
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IRF2805PBF 데이터시트(HTML) 1 Page - International Rectifier |
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1 / 9 page  IRF2805PbF HEXFET® Power MOSFET Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.45 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 Thermal Resistance VDSS = 55V RDS(on) = 4.7mΩ ID = 75A 07/22/10 www.irf.com 1 TO-220AB HEXFET(R) is a registered trademark of International Rectifier. S D G Description l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Typical Applications l Industrial Motor Drive This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon limited) 175 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig.9) 120 A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package limited) 75 IDM Pulsed Drain Current 700 PD @TC = 25°C Power Dissipation 330 W Linear Derating Factor 2.2 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 450 mJ EAS (6 sigma) Single Pulse Avalanche Energy Tested Value 1220 IAR Avalanche Current See Fig.12a, 12b, 15, 16 A EAR Repetitive Avalanche Energy mJ TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting Torque, 6-32 or M3 screw 1.1 (10) N•m (lbf•in) Absolute Maximum Ratings Features PD - 95493A |
유사한 부품 번호 - IRF2805PBF_15 |
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유사한 설명 - IRF2805PBF_15 |
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