KTB778_15 datasheet(1/2 Pages) KEC

부품명	KTB778

상세설명	TRIPLE DIFFUSED PNP TRANSISTOR

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제조업체	KEC [KEC(Korea Electronics)]

홈페이지	http://www.keccorp.com

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2009. 10. 7

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SEMICONDUCTOR

TECHNICAL DATA

KTB778

TRIPLE DIFFUSED PNP TRANSISTOR

Revision No : 2

HIGH POWER AMPLIFIER APPLICATION.

FEATURES

・Complementary to KTD998.

・Recommended for 45～50W Audio Frequency

Amplifier Output Stage.

MAXIMUM RATING (Ta=25℃)

DIM MILLIMETERS

A

1. BASE

2. COLLECTOR

3. EMITTER

16.30 MAX

4.00

2.00

2.20 MAX

3.05 MAX

TO-3P(H)IS

A

N

M

D

O O

H

12.00 0.30

5.50 0.20

1.20 MAX

8.00

5.00

17.00 0.30

0.60+0.15/-0.10

20.0 0.1

5.45

3.50

1.00

3.00 0.20

37.0

42.0

K

R

C

1 2 3

U

W

V

W

I

B

C

D

E

F

G

H

J

K

L

M

N

O

P

Q

R

S

2.50

I

T

U

Φ3.40+0.15/-0.10

V

10

W

8

+_

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Note : hFE Classification R:55～110, O:80～160

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=-120V, IE=0

-

-10

μA

Emitter Cut-off Current

IEBO

VEB=-5V, IC=0

-

-10

μA

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=-50mA, IB=0

-120

-

V

DC Current Gain

hFE (Note)

VCE=-5V, IC=-1A

55

-

160

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-5A, IB=-0.5A

-

-2.5

V

Base-Emitter Voltage

VBE

VCE=-5V, IC=-5A

-

-1.5

V

Transition Frequency

fT

VCE=-5V, IC=-1A

-

10

-

MHz

Collector Output Capacitance

Cob

VCB=-10V, IE=0, f=1MHz

-

280

-

pF

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-120

V

Collector-Emitter Voltage

VCEO

-120

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

DC

IC

-10

A

Pulse

ICP

-15

Base Current

IB

-1

A

Collector Power Dissipation (Tc=25℃)

PC

80

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

유사한 부품 번호 - KTB778_15

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