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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRF7316PBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRF7316PBF 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 7 page  IRF7316PbF Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage -0.78 -1.0 V TJ = 25°C, IS = -1.7A, VGS = 0V trr Reverse Recovery Time 44 66 ns TJ = 25°C, IF = -1.7A Qrr Reverse RecoveryCharge 42 63 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics -30 -2.5 A
Surface mounted on FR-4 board, t ≤ 10sec. Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.8A. Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -30 V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.022 V/°C Reference to 25°C, ID = -1mA 0.042 0.058 VGS = -10V, ID = -4.9A 0.076 0.098 VGS = -4.5V, ID = -3.6A VGS(th) Gate Threshold Voltage -1.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 7.7 S VDS = -15V, ID = -4.9A -1.0 VDS = -24V, VGS = 0V -25 VDS = -24V, VGS = 0V, TJ = 55°C Gate-to-Source Forward Leakage 100 VGS = -20V Gate-to-Source Reverse Leakage -100 VGS = 20V Qg Total Gate Charge 23 34 ID = -4.9A Qgs Gate-to-Source Charge 3.8 5.7 nC VDS = -15V Qgd Gate-to-Drain ("Miller") Charge 5.98.9 VGS = -10V, See Fig. 10 td(on) Turn-On Delay Time 13 19VDD = -15V tr Rise Time 13 20 ID = -1.0A td(off) Turn-Off Delay Time 34 51 RG = 6.0Ω tf Fall Time 32 48 RD = 15Ω Ciss Input Capacitance 710 VGS = 0V Coss Output Capacitance 380 pF VDS = -25V Crss Reverse Transfer Capacitance 180 = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns S D G |
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