전자부품 데이터시트 검색엔진 |
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IRF7321D2PBF 데이터시트(PDF) 1 Page - International Rectifier |
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IRF7321D2PBF 데이터시트(HTML) 1 Page - International Rectifier |
1 / 8 page Parameter Maximum Units ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -4.7 A ID @ TA = 70°C -3.8 IDM Pulsed Drain Current À -38 PD @TA = 25°C Power Dissipation 2.0 W PD @TA = 70°C 1.3 Linear Derating Factor 16 mW/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt Á -5.0 V/ns TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C l Co-packaged HEXFET ® Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET ® l Low VF Schottky Rectifier l Generation 5 Technology l SO-8 Footprint l Lead-Free IRF7321D2PbF 10/12/04 FETKY MOSFET & Schottky Diode Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) TM Description SO-8 VDSS = -30V RDS(on) = 0.062Ω Schottky Vf = 0.52V The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. Top View 8 1 2 3 4 5 6 7 A A S G D D K K Parameter Maximum Units RθJA Junction-to-Ambient à 62.5 °C/W Thermal Resistance Ratings Notes: Repetitive rating – pulse width limited by max. junction temperature (see fig. 11) ISD ≤ -2.9A, di/dt ≤ -77A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs – duty cycle ≤ 2% Surface mounted on FR-4 board, t ≤ 10sec. www.irf.com PD - 95297 |
유사한 부품 번호 - IRF7321D2PBF_15 |
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유사한 설명 - IRF7321D2PBF_15 |
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