DirectFET

™ Power MOSFET ‚

Description

very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The DirectFET

package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or

convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The

DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by

80%.

The IRF8301MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and

switching losses. The reduced total losses and very high current carrying capability make this product ideal for power tools.

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

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Fig 1. Typical On-Resistance vs. Gate Voltage

Typical values (unless otherwise specified)

Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage

DirectFET

™ ISOMETRIC

MT

DS(on)

l Dual Sided Cooling Compatible



switch (Power Tool)

l Compatible with existing Surface Mount Techniques

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SQ

SX

ST

MQ

MX

MT

MP

0

102030405060

QG, Total Gate Charge (nC)

0.0

1.0

2.0

3.0

4.0

5.0

VDS= 24V

VDS= 15V

ID= 25A

30V max ±20V max 1.3m

Ω@10V 1.9mΩ@ 4.5V

September 6, 2013

1

IRF8301MTRPbF

Absolute Maximum Ratings

Parameter

Units

Gate-to-Source Voltage

e

e

A

f

Pulsed Drain Current

g

Single Pulse Avalanche Energy

h

mJ

Avalanche Current

Ãg

A

25

Max.

27

192

250

±20

34

260

0

5

10

15

20

VGS, Gate -to -Source Voltage (V)

0

1

2

3

4

5

6

ID = 32A

TJ = 25°C

TJ = 125°C

Ordering Information

Orderable Part Number

Form

Quantity

IRF8301MPbF

DirectFET MT

Tape and Reel

4800

IRF8301MTRPbF

Base Part Number

Package Type

Standard Pack