IRF9362PBF_15 datasheet(3/8 Pages) IRF

부품명	IRF9362PBF

상세설명	Industry-Standard SO-8 Package

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제조업체	IRF [International Rectifier]

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IRF9362PbF

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3

Fig 4. Normalized On-Resistance vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

0.1

1

10

100

-V DS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

VGS

TOP

-10V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

-2.7V

BOTTOM

-2.5V

≤60µs PULSE WIDTH

Tj = 25°C

-2.5V

0.1

1

10

100

-V DS, Drain-to-Source Voltage (V)

0.1

1

10

100

-2.5V

≤60µs PULSE WIDTH

Tj = 150°C

VGS

TOP

-10V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

-2.7V

BOTTOM

-2.5V

1

2

3

4

5

6

-VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

TJ = 25°C

TJ = 150°C

VDS = -15V

≤60µs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.6

0.8

1.0

1.2

1.4

1.6

ID = -8.0A

VGS = -10V

0

1020

3040

QG, Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

VDS= -24V

VDS= -15V

VDS= -6.0V

ID= -6.4A

1

10

100

-VDS, Drain-to-Source Voltage (V)

100

1000

10000

VGS = 0V,

f = 1 KHZ

Ciss = Cgs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

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