전자부품 데이터시트 검색엔진 |
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IRFB4620PBF 데이터시트(PDF) 7 Page - International Rectifier |
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IRFB4620PBF 데이터시트(HTML) 7 Page - International Rectifier |
7 / 8 page IRFB4620PbF www.irf.com 7 Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Fig 22b. Unclamped Inductive Waveforms Fig 22a. Unclamped Inductive Test Circuit tp V(BR)DSS IAS RG IAS 0.01 Ω tp D.U.T L VDS + - VDD DRIVER A 15V 20V VGS Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform Vds Vgs Id Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period * VGS = 5V for Logic Level Devices * + - + + + - - - RG VDD • dv/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T Inductor Current D.U.T. VDS ID IG 3mA VGS .3 µF 50K Ω .2 µF 12V Current Regulator Same Type as D.U.T. Current Sampling Resistors + - VDS 90% 10% VGS td(on) tr td(off) tf VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD VGS RG D.U.T. 10V + - VDD VGS |
유사한 부품 번호 - IRFB4620PBF_15 |
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유사한 설명 - IRFB4620PBF_15 |
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