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1PS70SB14_15 데이터시트(PDF) 2 Page - NXP Semiconductors |
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2 / 9 page NXP Semiconductors 1PS70SB14 Dual Schottky barrier diode 1PS70SB14 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 17 December 2012 2 / 9 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A1 anode (diode1) 2 K2 cathode (diode2) 3 K1, A2 cathode (diode1) and anode (diode2) 1 2 3 SC-70 (SOT323) aaa-004973 A1 K2 K1, A2 6. Ordering information Table 3. Ordering information Package Type number Name Description Version 1PS70SB14 SC-70 plastic surface-mounted package; 3 leads SOT323 7. Marking Table 4. Marking codes Type number Marking code [1] 1PS70SB14 7%4 [1] % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode VR reverse voltage - 30 V IF forward current - 200 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 - 300 mA IFSM non-repetitive peak forward current tp < 10 ms; Tj(init) = 25 °C - 600 mA Ptot total power dissipation Tamb < 25 °C - 200 mW Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C |
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