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2PD2150_15 데이터시트(PDF) 2 Page - NXP Semiconductors |
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2PD2150_15 데이터시트(HTML) 2 Page - NXP Semiconductors |
2 / 13 page 2PD2150_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 2 January 2007 2 of 13 NXP Semiconductors 2PD2150 20 V, 3 A NPN low VCEsat (BISS) transistor 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on a ceramic PCB, Al2O3, standard footprint. Table 2. Pinning Pin Description Simplified outline Symbol 1 emitter 2 collector 3 base 321 sym042 1 2 3 Table 3. Ordering information Type number Package Name Description Version 2PD2150 SC-62 plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 Table 4. Marking codes Type number Marking code 2PD2150 M2 Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 40 V VCEO collector-emitter voltage open base - 20 V VEBO emitter-base voltage open collector - 6 V IC collector current - 3 A ICM peak collector current single pulse; tp ≤ 1ms -5 A Ptot total power dissipation Tamb ≤ 25 °C [1] - 0.5 W [2] -2 W Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C |
유사한 부품 번호 - 2PD2150_15_15 |
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유사한 설명 - 2PD2150_15_15 |
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