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2PD2150_15 데이터시트(PDF) 2 Page - NXP Semiconductors

부품명 2PD2150_15
상세설명  20 V, 3 A NPN low VCEsat (BISS) transistor
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
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2PD2150_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 2 January 2007
2 of 13
NXP Semiconductors
2PD2150
20 V, 3 A NPN low VCEsat (BISS) transistor
2.
Pinning information
3.
Ordering information
4.
Marking
5.
Limiting values
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
Table 2.
Pinning
Pin
Description
Simplified outline
Symbol
1
emitter
2
collector
3
base
321
sym042
1
2
3
Table 3.
Ordering information
Type number
Package
Name
Description
Version
2PD2150
SC-62
plastic surface-mounted package; collector pad for
good heat transfer; 3 leads
SOT89
Table 4.
Marking codes
Type number
Marking code
2PD2150
M2
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
40
V
VCEO
collector-emitter voltage
open base
-
20
V
VEBO
emitter-base voltage
open collector
-
6
V
IC
collector current
-
3
A
ICM
peak collector current
single pulse;
tp ≤ 1ms
-5
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[1] -
0.5
W
[2] -2
W
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C


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