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BAP51LX 데이터시트(PDF) 4 Page - NXP Semiconductors |
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4 / 9 page BAP51LX All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 2 — 6 August 2013 4 of 9 NXP Semiconductors BAP51LX Silicon PIN diode f=1MHz; Tj =25 C. f = 100 MHz; Tj =25 C. Fig 2. Diode capacitance as a function of reverse voltage; typical values Fig 3. Forward resistance as a function of forward current; typical values Tamb =25 C Diode zero biased and inserted in series with a 50 stripline circuit Tamb =25 C (1) IF =100 mA (2) IF =10 mA (3) IF =1mA (4) IF =0.5 mA Diode inserted in series with a 50 stripline circuit and biased via the analyzer Tee network Fig 4. Isolation of the diode as a function of frequency; typical values Fig 5. Insertion loss of the diode as a function of frequency; typical values 001aag633 VR (V) 020 16 812 4 200 100 300 400 Cd (fF) 0 001aag634 IF (mA) 10−1 102 10 1 10 1 102 rD ( Ω) 10−1 001aag635 f (MHz) 0 3000 2000 1000 −20 −30 −10 0 ISL (dB) −40 001aag636 f (MHz) 0 3000 2000 1000 −0.6 −0.4 −0.8 −0.2 0 Lins (dB) −1.0 (1) (2) (3) (4) |
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