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BAP51LX 데이터시트(PDF) 4 Page - NXP Semiconductors

부품명 BAP51LX
상세설명  Silicon PIN diode
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAP51LX 데이터시트(HTML) 4 Page - NXP Semiconductors

  BAP51LX_15 Datasheet HTML 1Page - NXP Semiconductors BAP51LX_15 Datasheet HTML 2Page - NXP Semiconductors BAP51LX_15 Datasheet HTML 3Page - NXP Semiconductors BAP51LX_15 Datasheet HTML 4Page - NXP Semiconductors BAP51LX_15 Datasheet HTML 5Page - NXP Semiconductors BAP51LX_15 Datasheet HTML 6Page - NXP Semiconductors BAP51LX_15 Datasheet HTML 7Page - NXP Semiconductors BAP51LX_15 Datasheet HTML 8Page - NXP Semiconductors BAP51LX_15 Datasheet HTML 9Page - NXP Semiconductors  
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BAP51LX
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 6 August 2013
4 of 9
NXP Semiconductors
BAP51LX
Silicon PIN diode
f=1MHz; Tj =25 C.
f = 100 MHz; Tj =25 C.
Fig 2.
Diode capacitance as a function of reverse
voltage; typical values
Fig 3.
Forward resistance as a function of forward
current; typical values
Tamb =25 C
Diode zero biased and inserted in series with a 50
stripline circuit
Tamb =25 C
(1) IF =100 mA
(2) IF =10 mA
(3) IF =1mA
(4) IF =0.5 mA
Diode inserted in series with a 50
 stripline circuit and
biased via the analyzer Tee network
Fig 4.
Isolation of the diode as a function of
frequency; typical values
Fig 5.
Insertion loss of the diode as a function of
frequency; typical values
001aag633
VR (V)
020
16
812
4
200
100
300
400
Cd
(fF)
0
001aag634
IF (mA)
10−1
102
10
1
10
1
102
rD
(
Ω)
10−1
001aag635
f (MHz)
0
3000
2000
1000
−20
−30
−10
0
ISL
(dB)
−40
001aag636
f (MHz)
0
3000
2000
1000
−0.6
−0.4
−0.8
−0.2
0
Lins
(dB)
−1.0
(1)
(2)
(3)
(4)


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