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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRLB8748PBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRLB8748PBF 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRLB8748PbF 2 www.irf.com Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 21 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 3.8 4.8 ––– 5.5 6.8 VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -7.1 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 196 ––– ––– S Qg Total Gate Charge ––– 15 23 Qgs1 Pre-Vth Gate-to-Source Charge ––– 3.6 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 2.2 ––– nC Qgd Gate-to-Drain Charge ––– 5.9 ––– Qgodr Gate Charge Overdrive ––– 3.9 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 8.1 ––– Qoss Output Charge ––– 11 ––– nC RG Gate Resistance ––– 2.0 3.5 Ω td(on) Turn-On Delay Time ––– 14 ––– tr Rise Time ––– 96 ––– td(off) Turn-Off Delay Time ––– 16 ––– tf Fall Time ––– 34 ––– Ciss Input Capacitance ––– 2139 ––– Coss Output Capacitance ––– 464 ––– Crss Reverse Transfer Capacitance ––– 199 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current à A EAR Repetitive Avalanche Energy mJ Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– (Body Diode) ISM Pulsed Source Current ––– ––– (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 2335ns Qrr Reverse Recovery Charge ––– 39 59 nC ton Forward Turn-On Time m Ω 92 f 370 µA nA ns pF A Typ. ––– Conditions 7.5 Max. 114 32 ƒ = 1.0MHz VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VDS = 15V, ID = 32A VDS = VGS, ID = 50µA VDS = 15V VGS = 4.5V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 40A e VGS = 4.5V, ID = 32A e VGS = 20V VGS = -20V ––– ID = 32A VGS = 0V VDS = 15V RG = 1.8Ω ID = 32A VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) MOSFET symbol ––– TJ = 25°C, IF = 32A, VDD = 15V di/dt = 200A/µs e TJ = 25°C, IS = 32A, VGS = 0V e showing the integral reverse p-n junction diode. |
유사한 부품 번호 - IRLB8748PBF_15 |
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유사한 설명 - IRLB8748PBF_15 |
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