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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRLML2246PBF 데이터시트(PDF) 2 Page - International Rectifier |
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IRLML2246PBF 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRLML2246TRPbF 2 www.irf.com G D S Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 9.5 ––– mV/°C ––– 90 135 ––– 157 236 VGS(th) Gate Threshold Voltage -0.4 ––– -1.1 V IDSS ––– ––– -1.0 ––– ––– -150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 16 ––– gfs Forward Transconductance 3.4 ––– ––– S Qg Total Gate Charge ––– 2.9 ––– Qgs Gate-to-Source Charge ––– 0.52 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 1.2 ––– td(on) Turn-On Delay Time ––– 5.3 ––– tr Rise Time ––– 7.7 ––– td(off) Turn-Off Delay Time ––– 26 ––– tf Fall Time ––– 16 ––– Ciss Input Capacitance ––– 220 ––– Coss Output Capacitance ––– 70 ––– Crss Reverse Transfer Capacitance ––– 48 ––– Source - Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– -1.2 V trr Reverse Recovery Time ––– 17 26 ns Qrr Reverse Recovery Charge ––– 6.2 9.3 nC ––– ––– ––– ––– pF A -1.3 -11 VDD =-10Vd nA nC ns VDS = VGS, ID = -10μA VDS = -16V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 125°C RDS(on) VGS = -2.5V, ID = -2.1A d Static Drain-to-Source On-Resistance Drain-to-Source Leakage Current μA m Conditions VGS = 0V, ID = -250μA Reference to 25°C, ID = -1mA VGS = -4.5V, ID = -2.6A d MOSFET symbol showing the VDS =-10V Conditions VGS = -4.5V VGS = 0V VDS = -16V ƒ = 1.0KHz RG = 6.8 VGS = -4.5V d di/dt = 100A/μs d VGS = 12V VGS = -12V TJ = 25°C, IS = -2.6A, VGS = 0V d integral reverse p-n junction diode. VDS = -10V, ID = -2.6A ID = -2.6A ID = -1.0A TJ = 25°C, VR = -15V, IF=-2.6A |
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