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IRF5Y1310CM 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRF5Y1310CM
상세설명  Avalanche Energy Ratings
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRF5Y1310CM 데이터시트(HTML) 1 Page - International Rectifier

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Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 10V, TC = 25°C
Continuous Drain Current
18*
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
18*
IDM
Pulsed Drain Current ➀
72
PD @ TC = 25°C
Max. Power Dissipation
100
W
Linear Derating Factor
0.8
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy ➁
210
mJ
IAR
Avalanche Current ➀
18
A
EAR
Repetitive Avalanche Energy ➀
10
mJ
dv/dt
Peak Diode Recovery dv/dt ➂
3.8
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063in./1.6mm from case for 10sec)
Weight
4.3 (Typical)
g
oC
A
01/17/01
www.irf.com
1
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRF5Y1310CM
100V
0.044
Ω 18A*
For footnotes refer to the last page
TO-257AA
HEXFET® POWER MOSFET
IRF5Y1310CM
THRU-HOLE (TO-257AA)
100V, N-CHANNEL
Fifth Generation HEXFET®
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
* Current is limited by package
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
PD - 94058


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