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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRFB7437PBF 데이터시트(PDF) 3 Page - International Rectifier |
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IRFB7437PBF 데이터시트(HTML) 3 Page - International Rectifier |
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3 / 10 page  3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback January 6, 2015 IRFB7437PbF Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 160 ––– ––– S Qg Total Gate Charge ––– 150 225 nC Qgs Gate-to-Source Charge ––– 41 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 51 ––– Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 99 ––– td(on) Turn-On Delay Time ––– 19 ––– ns tr Rise Time ––– 70 ––– td(off) Turn-Off Delay Time ––– 78 ––– tf Fall Time ––– 53 ––– Ciss Input Capacitance ––– 7330 ––– pF Coss Output Capacitance ––– 1095 ––– Crss Reverse Transfer Capacitance ––– 745 ––– Coss eff. (ER) Effective Output Capacitance (Energy Related) ià ––– 1310 ––– Coss eff. (TR) Effective Output Capacitance (Time Related)h ––– 1735 ––– Diode Characteristics Symbol Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 250 A (Body Diode) ISM Pulsed Source Current ––– ––– 1000 A (Body Diode)Ãd VSD Diode Forward Voltage ––– 1.0 1.3 V dv/dt Peak Diode Recovery f ––– 3.1 ––– V/ns trr Reverse Recovery Time ––– 30 ––– ns TJ = 25°C VR = 34V, ––– 30 ––– TJ = 125°C IF = 100A Qrr Reverse Recovery Charge ––– 24 ––– nC TJ = 25°C di/dt = 100A/μs g ––– 25 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 1.3 ––– A TJ = 25°C TJ = 175°C, IS = 100A, VDS = 40V g ID = 30A RG = 2.7Ω VDD = 20V Conditions VGS = 10V g VGS = 0V VDS = 25V ƒ = 1.0 MHz, See Fig. 5 VGS = 0V, VDS = 0V to 32V i, See Fig. 11 VGS = 0V, VDS = 0V to 32V h TJ = 25°C, IS = 100A, VGS = 0V g integral reverse p-n junction diode. MOSFET symbol showing the VGS = 10V g ID = 100A, VDS =20V, VGS = 10V Conditions VDS = 10V, ID = 100A ID = 100A VDS =20V D S G |
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