전자부품 데이터시트 검색엔진 |
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AD4C333 데이터시트(PDF) 5 Page - Solid State Optronic |
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AD4C333 데이터시트(HTML) 5 Page - Solid State Optronic |
5 / 9 page © 2014 Solid State Optronics • San José, CA www.ssousa.com • +1.408.293.4600 Page 5 of 9 AD4C333 /H/S/TR Rev 2.00 (03/05/2014) 001802 AD4C333 1 Form A / 1 Form B 250V / 10 Ω MOSFET Output Solid State Relay Process Step Description Parameter A Preheat Start Temperature (ºC) 150ºC B Preheat Finish Temperature (ºC) 180ºC C Preheat Time (s) 90 - 120s D Melting Temperature (ºC) 230ºC E Time above Melting Temperature (s) 30s F Peak Temperature, at Terminal (ºC) 260ºC G Dwell Time at Peak Temperature (s) 10s H Cool-down (ºC/s) <6ºC/s AD4C333 Solder Temperature Profile Recommendations (1) Infrared Reflow: Refer to the following figure as an example of an optimal temperature profile for single occurrence infrared reflow. Soldering process should not exceed temperature or time limits expressed herein. Surface temperature of device package should not exceed 250ºC: A B C D F E G H (2) Wave Solder: (3) Hand Solder: Maximum Temperature: 260ºC (at terminal) Maximum Time: 10s Pre-heating: 100 - 150ºC (30 - 90s) Single Occurrence Maximum Temperature: 350ºC (at tip of soldering iron) Maximum Time: 3s Single Occurrence Figure 1 |
유사한 부품 번호 - AD4C333_15 |
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유사한 설명 - AD4C333_15 |
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