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3N60ZL-TF3-T 데이터시트(PDF) 2 Page - Unisonic Technologies |
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3N60ZL-TF3-T 데이터시트(HTML) 2 Page - Unisonic Technologies |
2 / 8 page 3N60Z Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 8 www.unisonic.com.tw QW-R502-744.A ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 3.0 A Continuous Drain Current ID 3.0 A Pulsed Drain Current (Note 2) IDM 12 A Avalanche Energy Single Pulsed (Note 3) EAS 200 mJ Repetitive (Note 2) EAR 7.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation PD 34 W Junction Temperature TJ +150 ℃ Operating Temperature TOPR -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 64mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 3.0A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case θJC 3.68 °C/W ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 600 V Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V 10 μA Gate-Source Leakage Current Forward IGSS VGS = 30V, VDS = 0V 100 nA Reverse VGS = -30V, VDS = 0V -100 nA Breakdown Voltage Temperature Coefficient BV △ DSS/△TJ ID=250μA, Referenced to 25°C 0.6 V/℃ ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 1.5A 2.8 3.6 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz 350 450 pF Output Capacitance COSS 50 65 pF Reverse Transfer Capacitance CRSS 5.5 7.5 pF |
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