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CSD25484F4 데이터시트(PDF) 1 Page - Texas Instruments |
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CSD25484F4 데이터시트(HTML) 1 Page - Texas Instruments |
1 / 15 page D G S 0.20 mm Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD25484F4 SLPS551 – MAY 2015 CSD25484F4 –20 V P-Channel FemtoFET™ MOSFET 1 Features Product Summary 1 • Low On Resistance TA = 25°C TYPICAL VALUE UNIT • Ultra-Low Qg and Qgd VDS Drain-to-Source Voltage –20 V • Low Threshold Voltage Qg Gate Charge Total (–4.5 V) 1090 pC Qgd Gate Charge Gate-to-Drain 150 pC • Ultra-Small Footprint (0402 Case Size) VGS = –1.8 V 405 m Ω – 1.0 mm × 0.6 mm VGS = –2.5 V 150 m Ω Drain-to-Source • Ultra-Low Profile RDS(on) On-Resistance VGS = –4.5 V 93 m Ω – 0.2 mm Height VGS = –8.0 V 80 m Ω • Integrated ESD Protection Diode VGS(th) Threshold Voltage –0.95 V – Rated >4 kV HBM – Rated >2 kV CDM Ordering Information(1) Device Qty Media Package Ship • Lead and Halogen Free 7-Inch • RoHS Compliant CSD25484F4 3000 Femto(0402) Reel Tape and 1.0 mm × 0.6 mm Reel 7-Inch Land Grid Array (LGA) CSD25484F4T 250 2 Applications Reel • Optimized for Load Switch Applications (1) For all available packages, see the orderable addendum at the end of the data sheet. • Optimized for General Purpose Switching Applications Absolute Maximum Ratings • Battery Applications TA = 25°C VALUE UNIT • Handheld and Mobile Applications VDS Drain-to-Source Voltage –20 V VGS Gate-to-Source Voltage –12 V 3 Description ID Continuous Drain Current(1) –2.5 A This 80 m Ω, –20 V P-Channel FemtoFET™ MOSFET IDM Pulsed Drain Current(1)(2) –22 A is designed and optimized to minimize the footprint in Continuous Gate Clamp Current –35 IG mA many handheld and mobile applications. This Pulsed Gate Clamp Current(2) –350 technology is capable of replacing standard small PD Power Dissipation(1) 500 mW signal MOSFETs while providing at least a 60% Human Body Model (HBM) 4 kV ESD reduction in footprint size. Rating Charged Device Model (CDM) 2 kV . TJ, Operating Junction and –55 to 150 °C Tstg Storage Temperature Range Typical Part Dimensions (1) Typical RθJA = 85°C/W on 1 inch 2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB. (2) Pulse duration ≤100 μs, duty cycle ≤1% Top View . . . . 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
유사한 부품 번호 - CSD25484F4_15 |
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유사한 설명 - CSD25484F4_15 |
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