전자부품 데이터시트 검색엔진 |
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2SC3181N 데이터시트(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC3181N 데이터시트(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 4 page JMnic Product Specification 2 Silicon NPN Power Transistors 2SC3181N CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ,IB=0 120 V VCEsat Collector-emitter saturation voltage IC=6A; IB=0.6A 2.0 V VBE Base-emitter voltage IC=4A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 5 μA IEBO Emitter cut-off current VEB=5V; IC=0 5 μA hFE-1 DC current gain IC=1A ; VCE=5V 55 160 hFE-2 DC current gain IC=4A ; VCE=5V 35 fT Transition frequency IC=1A ; VCE=5V 30 MHz Cob Output capacitance IE=0 ; VCB=10V ;f=1MHz 190 pF hFE-1 Classifications R O 55-110 80-160 |
유사한 부품 번호 - 2SC3181N_15 |
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유사한 설명 - 2SC3181N_15 |
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