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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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BF1204 데이터시트(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1204 데이터시트(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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3 / 12 page  2001 Apr 25 3 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET BF1204 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per MOS-FET; unless otherwise specified VDS drain-source voltage − 10 V ID drain current (DC) − 30 mA IG1 gate 1 current −±10 mA IG2 gate 2 current −±10 mA Ptot total power dissipation Ts ≤ 102 °C − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 240 K/W handbook, halfpage 0 50 100 200 250 0 200 MGS359 150 150 100 50 Ts (°C) Ptot (mW) Fig.2 Power derating curve. |
유사한 부품 번호 - BF1204_15 |
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유사한 설명 - BF1204_15 |
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