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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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BF1205 데이터시트(PDF) 10 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1205 데이터시트(HTML) 10 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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10 / 24 page  2003 Sep 30 10 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET BF1205 handbook, halfpage 01 2 4 0 60 3 VAGC (V) gain reduction (dB) 20 40 MGX438 Fig.11 Gain reduction as a function of AGC voltage; typical values; amplifier a. VDS (a)=VDS (b) = 5 V; VG1-S (b) = 0 V; f = 50 MHz; see Fig.13. handbook, halfpage 0 gain reduction (dB) 60 16 12 4 0 8 20 40 MGX439 ID (mA) Fig.12 Drain current as a function of gain reduction; typical values; amplifier a. VDS (a)=VDS (b) = 5 V; VG1-S (b) = 0 V; f = 50 MHz; Tamb =25 °C; see Fig.13. handbook, full pagewidth L2 2.2 µH RG1 150 k Ω 10 k Ω RGEN 50 Ω Vi L1 2.2 µH MGX440 d (a) s d (b) g1 (a) g2 g1 (b) 4.7 nF 4.7 nF 4.7 nF 4.7 nF 4.7 nF BF1205 4.7 nF RL 50 Ω 50 Ω 50 Ω VDS(a) 5 V VDS(b) 5 V VGG 0 V VAGC Fig.13 Cross-modulation test set-up for amplifier a. |
유사한 부품 번호 - BF1205_15 |
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유사한 설명 - BF1205_15 |
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