전자부품 데이터시트 검색엔진 |
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BF1206F 데이터시트(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1206F 데이터시트(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 17 page BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 2 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 1.4 Quick reference data 2. Pinning information 3. Ordering information Table 1: Quick reference data Per MOSFET unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage (DC) - - 6 V ID drain current (DC) - - 30 mA |yfs| forward transfer admittance ID =4mA amplifier A 17 22 32 mS amplifier B 17 22 32 mS Ciss(G1) input capacitance at gate1 ID = 4 mA; f = 100 MHz amplifier A - 2.4 2.9 pF amplifier B - 1.7 2.2 pF NF noise figure ID = 4 mA amplifier A; f = 400 MHz - 1.0 1.6 dB amplifier B; f = 800 MHz - 1.0 1.6 dB Xmod cross modulation input level for k = 1 % at 40 dB AGC amplifier A 92 97 - dB µV amplifier B 93 98 - dB µV Table 2: Discrete pinning Pin Description Simplified outline Symbol 1 gate1 (AMP A) 2 source 3 gate1 (AMP B) 4 drain (AMP B) 5 drain (AMP A) 6 gate2 12 3 4 5 6 sym111 AMP A AMP B G1A S G1B G2 DA DB Table 3: Ordering information Type number Package Name Description Version BF1206F - plastic surface mounted package; 6 leads SOT666 |
유사한 부품 번호 - BF1206F_15 |
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유사한 설명 - BF1206F_15 |
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