TIP112G-TA3-T datasheet(3/4 Pages) UTC

부품명	TIP112G-TA3-T

상세설명	NPN EPITAXIAL SILICON TRANSISTOR

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제조업체	UTC [Unisonic Technologies]

홈페이지	http://www.utc-ic.com

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3 / 4 page

TIP112

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R203-022.D

TYPICAL CHARACTERISTICS

IB=150uA

IB=200uA

IB=250uA

IB=300uA

IB=350uA

IB=500uA

IB=400uA

IB=450uA

Collector-Emitter Voltage, VCE (V)

Static Characteristics

01

2

3

4

5

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

VCE=4V

Collector Current, IC (A)

DC Current Gain

0.01

110

10

100

1000

10000

0.1

110

10

1

0.1

DC

5mS

1mS

100

Collector-Emitter Voltage, VCE (V)

Safe Operating Area

25

050

75

100 125 150

175

0

10

20

30

40

50

60

70

80

Case Temperature, TC (°C)

Power Derating

유사한 부품 번호 - TIP112G-TA3-T

제조업체	부품명	데이터시트	상세설명
Unisonic Technologies	TIP112G-TA3-T	189Kb / 4P	NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

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TIP112G-TA3-T 데이터시트(PDF) 3 Page - Unisonic Technologies

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유사한 부품 번호 - TIP112G-TA3-T

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