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BD237 데이터시트(PDF) 2 Page - Unisonic Technologies |
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BD237 데이터시트(HTML) 2 Page - Unisonic Technologies |
2 / 3 page BD237 NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R226-001.C ABSOLUTE MAXIMUM RATINGS (T A=25 °C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 2 A Collector Dissipation PC 1.25 W Junction Temperature TJ 150 °C Storage Temperature Range TSTG -65~150 °C Note: Absolute maximum ratings are stress ratings only and functional device operation is not implied. Absolute maximum ratings are those values beyond which the device could be permanently damaged. ELECTRICAL CHARACTERISTICS (T A =25 °C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=1mA, IE=0 100 V Collector-Emitter Breakdown Voltage BVCEO IC=100mA, IB=0 80 V Emitter-Base Breakdown Voltage BVEBO IE=1mA, IC=0 5 V Collector Cut-Off Current ICBO VCB=100V, IE=0 100 µA Emitter Cut-Off Current IEBO VEB=5V, IC=0 1 mA Collector-Emitter Saturation Voltage VCE(sat) IC=1A, IB=100mA 0.6 V hFE (1) IC=150mA,VCE=2V 40 DC Current Gain hFE (2) IC=1A,VCE=2V 25 Transition Frequency fT IC=250mA, VCE=10V, f=10MHz 3 MHz |
유사한 부품 번호 - BD237_15 |
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유사한 설명 - BD237_15 |
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