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TC572502ECT 데이터시트(PDF) 2 Page - Microchip Technology |
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TC572502ECT 데이터시트(HTML) 2 Page - Microchip Technology |
2 / 16 page TC57 DS21437B-page 2 © 2002 Microchip Technology Inc. 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings* Input Voltage ........................................................+12V Output Current .................................................... 50mA Output Voltage............................. -0.3V to (VIN +0.3V) Power Dissipation.............................................150mW Operating Temperature Range............. -40°C to +85°C Storage Temperature Range .............. -40°C to +150°C *Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. TC55 ELECTRICAL SPECIFICATIONS TC57EP3002 Electrical Characteristics: SHDN = GND, VIN =VOUT +1V, VOUT =3V to5V, IOUT =0, TA = 25°C, Test Circuit of Figure 3-1, unless otherwise noted. (Note 2) Symbol Parameter Min Typ Max Units Test Conditions VIN Input Voltage — — 8 V VEXT Voltage on EXT Output — — 8 V VOUT Output Voltage 0.98 X VR VR ±0.5% 1.02 X VR VIOUT =50mA (Note 1) ∆VOUT Load Regulation -60 — 60 mV 1mA ≤ IOUT ≤ 100mA (Note 3) VIN -VOUT Dropout Voltage — 100 — mV IOUT =100mA (Note 2) IDD Supply Current — 50 80 µAV SHDN =VIN =5V ISHDN Shutdown Supply Current — — 0.6 µAV SHDN =GND ∆VOUT/∆VIN Line Regulation — 0.1 0.3 %/V IOUT = 50mA, 4V ≤ VIN ≤ 8V (Note 3) ∆V OUT/∆TVOUT Temperature Coefficient — ±100 — ppm/°C IOUT =10mA, -40°C < TJ < +85°C (Note 3) ILEXT EXT Pin Leakage Current — — 0.5 µA IEXT EXT Sink Current — — 25 mA Note 4 VIH SHDN Input High Logic Threshold 1.5 — — V VIL SHDN Input Low Logic Threshold — — 0.25 V IIH SHDN Input Current @ VIH —— 0.1 µAVSHDN =VIN =5V IIL SHDN Input Current @ VIL -0.2 -0.05 0 µAVSHDN =GND Note 1: VR is the regulator output voltage setting. 2: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V differential. 3: Varies with type of pass transistor used. Numbers shown are for the test circuit of Figure 3-1. 4: The product of IEXT X VEXT must be less than the maximum allowable power dissipation. |
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