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3N90G-TF1-T 데이터시트(PDF) 2 Page - Unisonic Technologies |
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3N90G-TF1-T 데이터시트(HTML) 2 Page - Unisonic Technologies |
2 / 6 page 3N90 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 6 www.unisonic.com.tw QW-R502-290.D ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0V) VDSS 900 V Drain-Gate Voltage (RG=20kΩ) VDGR 900 V Gate-Source Voltage VGSS ±30 V Gate-Source Breakdown Voltage (IGS=±1mA) BVGSO 30(MIN) V Continuous Drain Current ID 3 A Pulsed Drain Current IDM 10 A Single Pulse Avalanche Energy (Note 3) EAS 180 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation TO-220/TO-263 TO-230 PD 90 W TO-220F/TO-220F1 25 TO-220F2 26 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L = 40mH, IAS = 3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≦3A, di/dt≦200A/μs, VDD≦BVDSS, TJ≦TJ(MAX). THERMAL DATA PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case TO-220/ TO-263 TO-230 θJC 1.38 °C/W TO-220F/TO-220F1 5 TO-220F2 4.9 |
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