SI4916DY datasheet(3/13 Pages) TFUNK

부품명	SI4916DY

상세설명	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Document Number: 74331

S09-0540-Rev. B, 06-Apr-09

www.vishay.com

3

Vishay Siliconix

Si4916DY

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.a

Max.

Unit

Dynamica

Turn-On Delay Time

td(on)

Channel-1

VDD = 15 V, RL = 15 Ω

ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω

Channel-2

VDD = 15 V, RL = 15 Ω

ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω

Ch-1

8

15

ns

Ch-2

9

15

Rise Time

tr

Ch-1

11

18

Ch-2

13

20

Turn-Off Delay Time

td(off)

Ch-1

21

32

Ch-2

27

40

Fall Time

tf

Ch-1

6

10

Ch-2

9

15

Source-Drain Reverse Recovery Time

trr

IF = 1.3 A, dI/dt = 100 A/µs

Ch-1

28

40

IF = 2.2 A, dI/dt = 100 µA/µs

Ch-2

24

35

Body Diode Reverse Recovery Charge

Qrr

IF = 1.3 A, dI/dt = 100 A/µs

Ch-1

17

nC

IF = 2.2 A, dI/dt = 100 µA/µs

Ch-2

12

Reverse Recovery Fall Time

ta

IF = 1.3 A, dI/dt = 100 A/µs

Ch-1

12

ns

IF = 2.2 A, dI/dt = 100 µA/µs

Ch-2

11

Reverse Recovery Rise Time

tb

IF = 1.3 A, dI/dt = 100 A/µs

Ch-1

16

IF = 2.2 A, dI/dt = 100 µA/µs

Ch-2

13

SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Forward Voltage Drop

VF

IF = 1.0 A

0.47

0.50

V

IF = 1.0 A, TJ = 125 °C

0.36

0.42

Maximum Reverse Leakage Current

Irm

VR = 30 V

0.004

0.100

mA

VR = 30 V, TJ = 100 °C

0.7

10

VR = - 30 V, TJ = 125 °C

3.0

20

Junction Capacitance

CT

VR = 10 V

50

pF

유사한 부품 번호 - SI4916DY

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI4916DY	261Kb / 13P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. B, 06-Apr-09
	SI4916DY	196Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode 08-Feb-17
	SI4916DY-T1-E3	261Kb / 13P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. B, 06-Apr-09
	SI4916DY-T1-GE3	261Kb / 13P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. B, 06-Apr-09
	SI4916DY	196Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode 08-Feb-17

More results

유사한 설명 - SI4916DY

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI4808DY	46Kb / 5P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. B, 26-May-03
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	SI4834BDY-T1-E3	261Kb / 10P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. D, 18-May-09
	SI4834BDY	93Kb / 7P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. C, 29-Dec-03
	SI4650DY	155Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. D, 18-Jan-10
	SI4310BDY	152Kb / 10P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode 01-Jan-2022
	SI7872DP	149Kb / 10P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode 18-Jul-08
	SI7842DP	133Kb / 6P	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode 01-Jan-2022
	SIZ980BDT	239Kb / 14P	Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode 01-Jan-2022

More results

SI4916DY 데이터시트(PDF) 3 Page - Vishay Telefunken

SI4916DY 데이터시트(HTML) 3 Page - Vishay Telefunken

유사한 부품 번호 - SI4916DY

유사한 설명 - SI4916DY

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