SI7998DP datasheet(2/18 Pages) TFUNK

부품명	SI7998DP

상세설명	Dual N-Channel 30 V (D-S) MOSFET

Download	18 Pages

Scroll/Zoom	100%

제조업체	TFUNK [Vishay Telefunken]

홈페이지	http://www.vishay.com

Logo

2 / 18 page

Si7998DP

www.vishay.com

Vishay Siliconix

S14-1941-Rev. C, 29-Sep-14

2

Document Number: 68970

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

Ch-1

30

-

V

Ch-2

30

-

VDS Temperature Coefficient

ΔVDS/TJ

ID = 250 μA

Ch-1

-

28

-

mV/°C

Ch-2

-

26

-

VGS(th) Temperature Coefficient

ΔVGS(th)/TJ

ID = 250 μA

Ch-1

-

-5.6

-

Ch-2

-

-6

-

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

Ch-1

1.2

-

2.5

V

Ch-2

1.2

-

2.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

Ch-1

-

100

nA

Ch-2

-

100

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

Ch-1

-

1

μA

Ch-2

-

1

VDS = 30 V, VGS = 0 V, TJ = 85 °C

Ch-1

-

10

Ch-2

-

10

On-State Drain Current b

ID(on)

VDS

≥ 5 V, VGS = 10 V

Ch-1

30

-

A

Ch-2

30

-

Drain-Source On-State Resistance b

RDS(on)

VGS = 10 V, ID = 15 A

Ch-1

-

0.0076 0.0093

Ω

VGS = 10 V, ID = 20 A

Ch-2

-

0.0044 0.0053

VGS = 4.5 V, ID = 13 A

Ch-1

-

0.0103 0.0124

VGS = 4.5 V, ID = 18 A

Ch-2

-

0.0058 0.0070

Forward Transconductance b

gfs

VDS = 10 V, ID = 15 A

Ch-1

-

45

-

S

VDS = 10 V, ID = 20 A

Ch-2

-

71

-

Dynamic a

Input Capacitance

Ciss

Channel-1

VDS = 15 V, VGS = 0 V, f = 1 MHz

Channel-2

VDS = 15 V, VGS = 0 V, f = 1 MHz

Ch-1

-

1100

-

pF

Ch-2

-

2000

-

Output Capacitance

Coss

Ch-1

-

200

-

Ch-2

-

390

-

Reverse Transfer Capacitance

Crss

Ch-1

-

90

-

Ch-2

-

160

-

Total Gate Charge

Qg

VDS = 15 V, VGS = 10 V, ID = 15 A

Ch-1

-

17

26

nC

VDS = 15 V, VGS = 10 V, ID = 20 A

Ch-2

-

32

48

Channel-1

VDS = 15 V, VGS = 4.5 V, ID = 15 A

Channel-2

VDS = 15 V, VGS = 4.5 V, ID = 20 A

Ch-1

-

8.2

13

Ch-2

-

15.3

23

Gate-Source Charge

Qgs

Ch-1

-

3.2

-

Ch-2

-

6.3

-

Gate-Drain Charge

Qgd

Ch-1

-

2.7

-

Ch-2

-

4.7

-

Gate Resistance

Rg

f = 1 MHz

Ch-1

-

3.5

7

W

Ch-2

-

3.5

7

유사한 부품 번호 - SI7998DP

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI7998DP	143Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 16-Feb-09
Vishay Telefunken	SI7998DP	393Kb / 18P	Dual N-Channel 30 V (D-S) MOSFET
Vishay Siliconix	SI7998DP	394Kb / 18P	Dual N-Channel 30 V (D-S) MOSFET 01-Jan-2022
	SI7998DP-T1-GE3	394Kb / 18P	Dual N-Channel 30 V (D-S) MOSFET 01-Jan-2022
	SI7998DP	394Kb / 18P	Dual N-Channel 30 V (D-S) MOSFET 01-Jan-2022

More results

유사한 설명 - SI7998DP

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI7212DN	94Kb / 6P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 13-Jun-05
DinTek Semiconductor Co...	DTM4936	294Kb / 9P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4932DY	111Kb / 7P	Dual N-Channel 30-V (D-S) MOSFET Rev. A, 22-Dec-08
Vishay Siliconix	SIZ340DT	372Kb / 14P	Dual N-Channel 30 V (D-S) MOSFET Rev. B, 24-Mar-14
Analog Power	AM6926NH	398Kb / 5P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4276DY-T1-E3	232Kb / 14P	Dual N-Channel 30 V (D-S) MOSFET Rev. A, 11-Apr-11
	SI4276DY	304Kb / 15P	Dual N-Channel 30 V (D-S) MOSFET Rev. A, 31-May-10
	SI5906DU	164Kb / 10P	Dual N-Channel 30-V (D-S) MOSFET Rev. A, 20-Jul-09
	SI7212DN	549Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET Rev. F, 14-Sep-09
Analog Power	AM4934N	95Kb / 3P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4936ADY	61Kb / 4P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 13-Oct-03

More results

SI7998DP 데이터시트(PDF) 2 Page - Vishay Telefunken

SI7998DP 데이터시트(HTML) 2 Page - Vishay Telefunken

유사한 부품 번호 - SI7998DP

유사한 설명 - SI7998DP

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

데이터시트 다운로드

링크 URL