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SI4286DY 데이터시트(PDF) 1 Page - Vishay Telefunken

부품명 SI4286DY
상세설명  Dual N-Channel 40 V (D-S) MOSFET
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Vishay Siliconix
Si4286DY
Document Number: 67599
S11-1151-Rev. A, 13-Jun-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual N-Channel 40 V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Gen III Power MOSFET
100 % Rg Tested
100 % UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
DC/DC Converter
- External HDD
- Notebook System Power
LCD Display Backlighting
PRODUCT SUMMARY
VDS (V)
RDS(on) ()ID (A)
a
Qg (Typ.)
40
0.0325 at VGS = 10 V
7
3.3 nC
0.040 at VGS = 4.5 V
6.3
D1
G1
D1
D2
G2
D2
SO-8
5
6
7
8
Top View
2
3
4
1
S1
S2
Ordering Information: Si4286DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
G1
D1
S1
N-Channel MOSFET
G2
D2
S2
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
40
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
7
A
TC = 70 °C
5.6
TA = 25 °C
5.7b, c
TA = 70 °C
4.6b, c
Pulsed Drain Current (t = 300 µs)
IDM
20
Continuous Source-Drain Diode Current
TC = 25 °C
IS
2.4
TA = 25 °C
1.6b, c
Single Pulse Avalanche Current
L = 0.1 mH
IAS
8
Single Pulse Avalanche Energy
EAS
3.2
mJ
Maximum Power Dissipation
TC = 25 °C
PD
2.9
W
TC = 70 °C
1.86
TA = 25 °C
1.9b, c
TA = 70 °C
1.23b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, d
t
 10 s
RthJA
55
65
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
35
43


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