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SI5410DU 데이터시트(PDF) 1 Page - Vishay Telefunken |
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SI5410DU 데이터시트(HTML) 1 Page - Vishay Telefunken |
1 / 9 page Vishay Siliconix Si5410DU New Product Document Number: 69827 S-81448-Rev. B, 23-Jun-08 www.vishay.com 1 N-Channel 40-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile • 100 % UIS Tested APPLICATIONS • Load Switch, PA Switch, and Battery Switch for Portable Applications • DC-DC Synchronous Rectification PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) 40 0.018 at VGS = 10 V 12 10 nC 0.021 at VGS = 4.5 V 12 Ordering Information: Si5410DU-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code AJ XXX Lot Traceability and Date Code Part # Code Bottom View PowerPAK ChipFET Single D D D G 1 2 8 7 6 5 D D D S 3 4 S N-Channel MOSFET G D S Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 90 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 12a A TC = 70 °C 12a TA = 25 °C 9.8b, c TA = 70 °C 7.9b, c Pulsed Drain Current IDM 30 Continuous Source-Drain Diode Current TC = 25 °C IS 12a TA = 25 °C 2.6b, c Single Pulse Avalanche Current L = 0.1 mH IAS 19 Single Pulse Avalanche Energy EAS 18 mJ Maximum Power Dissipation TC = 25 °C PD 31 W TC = 70 °C 20 TA = 25 °C 3.1b, c TA = 70 °C 2b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f t ≤ 5 s RthJA 34 40 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 34 RoHS COMPLIANT |
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