SI5410DU datasheet(1/9 Pages) TFUNK

부품명	SI5410DU

상세설명	N-Channel 40-V (D-S) MOSFET

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Vishay Siliconix

Si5410DU

New Product

Document Number: 69827

S-81448-Rev. B, 23-Jun-08

www.vishay.com

1

N-Channel 40-V (D-S) MOSFET

FEATURES

•

Halogen-free

•

TrenchFET® Power MOSFET

•

New Thermally Enhanced PowerPAK®

ChipFET® Package

- Small Footprint Area

- Low On-Resistance

- Thin 0.8 mm Profile

•

100 % UIS Tested

APPLICATIONS

•

Load Switch, PA Switch, and Battery

Switch for Portable Applications

•

DC-DC Synchronous Rectification

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

40

0.018 at VGS = 10 V

12

10 nC

0.021 at VGS = 4.5 V

12

Ordering Information: Si5410DU-T1-GE3 (Lead (Pb)-free and Halogen-free)

Marking Code

AJ

XXX

Lot Traceability

and Date Code

Part # Code

Bottom View

PowerPAK ChipFET Single

D

G

1

2

8

7

6

5

D

S

3

4

S

N-Channel MOSFET

G

D

S

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 90 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

12a

A

TC = 70 °C

12a

TA = 25 °C

9.8b, c

TA = 70 °C

7.9b, c

Pulsed Drain Current

IDM

30

Continuous Source-Drain Diode Current

TC = 25 °C

IS

12a

TA = 25 °C

2.6b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

19

Single Pulse Avalanche Energy

EAS

18

mJ

Maximum Power Dissipation

TC = 25 °C

PD

31

W

TC = 70 °C

20

TA = 25 °C

3.1b, c

TA = 70 °C

2b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, f

t

≤ 5 s

RthJA

34

40

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

34

RoHS

COMPLIANT

유사한 부품 번호 - SI5410DU

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI5410DU	110Kb / 7P	N-Channel 40-V (D-S) MOSFET Rev. B, 23-Jun-08
Vishay Siliconix	SI5410DU-T1-GE3	110Kb / 7P	N-Channel 40-V (D-S) MOSFET Rev. B, 23-Jun-08

More results

유사한 설명 - SI5410DU

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI2318DS	79Kb / 4P	N-Channel 40-V (D-S) MOSFET Rev. A, 18-Aug-03
	SIRA58DP	409Kb / 13P	N-Channel 40 V (D-S) MOSFET Rev. A, 08-Feb-16
	SUM90N04-3M3P	185Kb / 8P	N-Channel 40 V (D-S) MOSFET Rev. B, 02-Dec-13
Analog Power	AM2340N	326Kb / 5P	N-Channel 40-V (D-S) MOSFET
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Vishay Siliconix	SISS10DN	330Kb / 9P	N-Channel 40 V (D-S) MOSFET Rev. A, 08-Feb-16
Analog Power	AM2344N	313Kb / 5P	N-Channel 40-V (D-S) MOSFET
Vishay Siliconix	SI2318CDS	236Kb / 10P	N-Channel 40 V (D-S) MOSFET Rev. A, 04-Oct-10
	SI4154DY	91Kb / 7P	N-Channel 40-V (D-S) MOSFET Rev. A, 01-Jun-09
	SI4446DY	265Kb / 9P	N-Channel 40-V (D-S) MOSFET Rev. B, 02-Mar-09

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SI5410DU 데이터시트(PDF) 1 Page - Vishay Telefunken

SI5410DU 데이터시트(HTML) 1 Page - Vishay Telefunken

유사한 부품 번호 - SI5410DU

유사한 설명 - SI5410DU

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