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N01S830HA 데이터시트(PDF) 4 Page - ON Semiconductor

부품명 N01S830HA
상세설명  1 Mb Ultra-Low Power Serial SRAM
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

N01S830HA 데이터시트(HTML) 4 Page - ON Semiconductor

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N01S830HA, N01S830BA
http://onsemi.com
4
DEVICE OPERATIONS
Read Operation
The serial SRAM Read operation is started by by enabling
CS low. First, the 8-bit Read instruction is transmitted to the
device through the SI (or SIO0-3) pin(s) followed by the
24-bit address with the 7 MSBs of the address being “don’t
care” bits and ignored. In SPI mode, after the READ
instruction and address bits are sent, the data stored at that
address in memory is shifted out on the SO pin after the
output valid time. Additional “dummy” clock cycles (four in
DUAL and two in QUAD) are required to follow the
instruction and address inputs prior to the data being driven
out on the SIO0-3 pins while operating in these two modes.
By continuing to provide clock cycles to the device, data
can continue to be read out of the memory array in
sequentially. The internal address pointer is automatically
incremented to the next higher address after each byte of
data is read out until the highest memory address is reached.
When the highest memory address is reached, 1FFFFh, the
address pointer wraps to the address 00000h. This allows the
read cycles to be continued indefinitely. All Read operations
are terminated by pulling CS high.
Figure 2. SPI Read Sequence (Single Byte)
CS
Instruction
SI
04
3
25
16
9
810
7
11
SCK
23 22 21 20
21
0
7
65
43
21
0
High−Z
24−bit address
Data Out
SO
29
31
30
32
36 37 38 39
34 35
33
000
0
00
1
1
Figure 3. SPI Read Sequence (Sequential Bytes)
CS
Instruction
SI
04
3
25
16
9
810
7
11
SCK
23 22 21 20
210
7
65
43
21
0
High−Z
24−bit address
Data Out from ADDR 1
SO
29
31
30
32
36 37 38 39
34 35
33
000
0
0
011
7
65
43
210
Data Out from ADDR 2
7
65
43
21
0
7
6
543
210
...
40
42
41
43
47 48 49 50
45 46
44
51
53
52
54 55
Don’t Care
Don’t Care
ADDR 1
Data Out from ADDR 3
Data Out from ADDR n


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