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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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SSF1502G5 데이터시트(PDF) 2 Page - GOOD-ARK Electronics |
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SSF1502G5 데이터시트(HTML) 2 Page - GOOD-ARK Electronics |
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2 / 7 page  SSF1502G5 150V N-Channel MOSFET www.goodark.com Page 2 of 7 Rev.1.0 Thermal Resistance Symbol Characteristics Typ. Max. Units RθJC Junction-to-case ③ — 13 ℃/W Junction-to-Ambient (t ≤ 10s)④ — 62 ℃/W RθJA Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 150 — — V VGS = 0V, ID = 250μA — 0.14 0.2 VGS=10V,ID = 2.8A RDS(on) Static Drain-to-Source on-resistance — 0.32 — Ω TJ = 125°C 2 — 4 VDS = VGS, ID = 250μA VGS(th) Gate threshold voltage — 2.63 — V TJ = 125°C — — 1 VDS =120V, VGS =0V IDSS Drain-to-Source leakage current — — 50 μA TJ = 125°C Gate-to-Source forward leakage — — 100 VGS =20V IGSS Gate-to-Source reverse leakage -100 — — nA VGS = -20V Qg Total gate charge — 30.9 — Qgs Gate-to-Source charge — 6.5 — Qgd Gate-to-Drain("Miller") charge — 10.6 — nC ID = 2.8A VDD=75V VGS = 10V td(on) Turn-on delay time — 11.8 — tr Rise time — 5.7 — td(off) Turn-Off delay time — 29.3 — tf Fall time — 6.0 — nS VGS=10V, VDS =75V, RL=26Ω, RGEN=6Ω ID =2.8A Ciss Input capacitance — 1230 — Coss Output capacitance — 47 — Crss Reverse transfer capacitance — 31 — pF VGS = 0V VDS = 75V ƒ =1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 6 A ISM Pulsed Source Current (Body Diode) — — 24 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.81 1.5 V IS=2.8A, VGS=0V,TJ= 25°C trr Reverse Recovery Time — 54.8 — nS Qrr Reverse Recovery Charge — 133.9 — nC TJ = 25°C, IF =2.8A, di/dt = 100A/μs |
유사한 부품 번호 - SSF1502G5_15 |
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유사한 설명 - SSF1502G5_15 |
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