SSF3324_15 datasheet(2/8 Pages) GOOD-ARK

부품명	SSF3324

상세설명	30V N-Channel MOSFET

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제조업체	GOOD-ARK [GOOD-ARK Electronics]

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2 / 8 page

SSF3324

30V N-Channel MOSFET

www.goodark.com

Page 2 of 8

Rev.1.1

Thermal Resistance

Symbol

Characteristics

Typ.

Max.

Units

RθJA

Junction-to-ambient (t ≤ 10s) ③

—

90

℃/W

Electrical Characteristics @TA=25℃ unless otherwise specified

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

30

—

V

VGS = 0V, ID = 250μA

—

26.5

35

VGS=4.5V,ID = 2A

RDS(on)

Static Drain-to-Source on-resistance

—

43.7

—

mΩ

TJ = 125℃

—

31.1

40

VGS=2.5V,ID=1.5A

RDS(on)

Static Drain-to-Source on-resistance

—

50.2

—

mΩ

TJ = 125℃

—

44.9

50

VGS=1.8V,ID=1A

RDS(on)

Static Drain-to-Source on-resistance

—

62.1

—

mΩ

TJ = 125℃

0.7

—

1.4

VDS = VGS, ID = 250μA

VGS(th)

Gate threshold voltage

—

0.63

—

V

TJ = 125℃

—

1

VDS = 24V,VGS = 0V

IDSS

Drain-to-Source leakage current

—

50

μA

TJ = 125°C

—

100

VGS =12V

IGSS

Gate-to-Source forward leakage

—

-100

nA

VGS = -12V

Qg

Total gate charge

—

10

—

Qgs

Gate-to-Source charge

—

2

—

Qgd

Gate-to-Drain("Miller") charge

—

3

—

nC

ID = 5.8A,

VDS=15V,

VGS = 4.5V

td(on)

Turn-on delay time

—

3

—

tr

Rise time

—

5

—

td(off)

Turn-Off delay time

—

26

—

tf

Fall time

—

4

—

ns

VGS=10V, VDS =15V,

RGEN=3Ω，

Ciss

Input capacitance

—

1245

—

Coss

Output capacitance

—

85

—

Crss

Reverse transfer capacitance

—

70

—

pF

VGS = 0V,

VDS =15V,

ƒ = 1MHz

Source-Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

IS

Continuous Source Current

(Body Diode)

—

5.8 ①

A

ISM

Pulsed Source Current

(Body Diode)

—

23

A

MOSFET symbol

showing

the

integral reverse

p-n junction diode.

V

SD

Diode Forward Voltage

—

0.72

1.2

V

IS=1A, VGS=0V

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