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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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MSAFZ33N20A 데이터시트(PDF) 1 Page - Microsemi Corporation |
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MSAFZ33N20A 데이터시트(HTML) 1 Page - Microsemi Corporation |
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1 / 2 page  MSAEZ33N20A MSAFZ33N20A 200 Volts 33 Amps 70 m Ω Ω Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Reverse polarity available upon request DESCRIPTION SYMBOL MAX. UNIT Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C BVDSS 200 Volts Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ BVDGR 200 Volts Continuous Gate-to-Source Voltage VGS +/-20 Volts Transient Gate-to-Source Voltage VGSM +/-30 Volts Continuous Drain Current Tj= 25 °C Tj= 100 °C ID25 ID100 33 20 Amps Peak Drain Current, pulse width limited by TJmax IDM 132 Amps Repetitive Avalanche Current IAR 33 Amps Repetitive Avalanche Energy EAR 16 mJ Single Pulse Avalanche Energy EAS 790 mJ Voltage Rate of Change of the Recovery Diode @ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C dv/dt TBD V/ns Power Dissipation PD 300 Watts Junction Temperature Range Tj -55 to +150 °C Storage Temperature Range Tstg -55 to +150 °C Continuous Source Current (Body Diode) IS 33 Amps Pulse Source Current (Body Diode) ISM 132 Amps Thermal Resistance, Junction to Case θ JC 0.4 °C/W Maximum Ratings @ 25 °°C (unless otherwise specified) Mechanical Outline Datasheet# MSC0300A 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 N-CHANNEL ENHANCEMENT MODE POWER MOSFET DRAIN SOURCE GATE |
유사한 부품 번호 - MSAFZ33N20A |
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유사한 설명 - MSAFZ33N20A |
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