MSAGZ52F120A datasheet(1/2 Pages) MICROSEMI

부품명	MSAGZ52F120A

상세설명	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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제조업체	MICROSEMI [Microsemi Corporation]

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MSAGZ52F120A

MSAHZ52F120A

1200 Volts

52 Amps

3.2 Volts vce(sat)

Features

• Rugged polysilicon gate cell structure

• high current handling capability, latch-proof

• Hermetically sealed, surface mount power package

• Low package inductance

•

Very low thermal resistance

•

Reverse polarity available upon request: MSAH(G)Z52F120B

•

high frequency IGBT, low switching losses

•

anti-parallel FREDiode (MSAHZ52F120A only)

DESCRIPTION

SYMBOL

MAX.

UNIT

Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)

@ TJ

≥ 25°C

BVCES

1200

Volts

Collector-to-Gate Breakdown Voltage @ TJ

≥ 25°C, RGS= 1 MΩ

BVCGR

1200

Volts

Continuous Gate-to-Emitter Voltage

VGES

+/-20

Volts

Transient Gate-to-Emitter Voltage

VGEM

+/-30

Volts

Continuous Collector Current

Tj= 25

°C

Tj=

90

°C

IC25

IC90

52

33

Amps

Peak Collector Current (pulse width limited by Tjmax,)

Tj= 25

°C

Tj=

90

°C

ICM(25)

ICM(90)

104

66

Amps

Avalanche energy (single pulse) @ IC= 25A, VCC= 50V, L= 200

µH,

RG= 25

Ω, Tj= 25°C

EAS

65

mJ

Short circuit current (SOA) , VCE

≤ 1200V, TJ= 150°C, tsc≤ 10µs

IC(sc)

260

A

Short circuit (reverse) current (RBSOA) , VCE

≤ 1200V, TJ= 150°C

IC(sc)RBSOA

66

A

Power Dissipation

PD

300

Watts

Junction Temperature Range

Tj

-55 to +150

°C

Storage Temperature Range

Tstg

-55 to +150

°C

Continuous Source Current (Body Diode, MSAHZ52F120A only)

IS

50

Amps

Pulse Source Current (Body Diode, MSAHZ52F120A only)

ISM

100

Amps

Thermal Resistance, Junction to Case

θ

JC

0.4

°C/W

Maximum Ratings @ 25

°°C (unless otherwise specified)

Mechanical Outline

Datasheet# MSC0295A

2830 S. Fairview St.

Santa Ana, CA 92704

PH: (714) 979-8220

FAX: (714) 966-5256

N-CHANNEL

INSULATED GATE

BIPOLAR TRANSISTOR

COLLECTOR

EMITTER (MS…A)

GATE (MS…B)

유사한 부품 번호 - MSAGZ52F120A

제조업체	부품명	데이터시트	상세설명
Adam Technologies, Inc.	MSAG	136Kb / 1P	MINI SHUNTS .050 & .100 [2.54] CENTERLINE
Microsemi Corporation	MSAGA11F120D	221Kb / 3P	Fast IGBT Die for Implantable Cardio Defibrillator Applications
	MSAGX60F60A	50Kb / 2P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
	MSAGX75F60A	45Kb / 2P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
	MSAGX75L60A	48Kb / 2P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

More results

유사한 설명 - MSAGZ52F120A

제조업체	부품명	데이터시트	상세설명
Microsemi Corporation	PPNGZ52F120A	102Kb / 3P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Unisonic Technologies	1N50A	194Kb / 5P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Unisonic Technologies	30N06V-Q	205Kb / 6P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Advanced Power Electron...	AP25G45GEM	69Kb / 3P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Silicon Standard Corp.	SSM20G45EGH	763Kb / 7P	N-channel Insulated-Gate Bipolar Transistor
Silicon Standard Corp.	SSM28G45EM	263Kb / 4P	N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR
Unisonic Technologies	UG25N45	184Kb / 3P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Advanced Power Electron...	AP20GT60P-HF	65Kb / 3P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
	AP30G40GEO-HF	60Kb / 3P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
	AP40G120W	99Kb / 3P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Microsemi Corporation	MSAGX75F60A	45Kb / 2P	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

More results

MSAGZ52F120A 데이터시트(PDF) 1 Page - Microsemi Corporation

MSAGZ52F120A 데이터시트(HTML) 1 Page - Microsemi Corporation

유사한 부품 번호 - MSAGZ52F120A

유사한 설명 - MSAGZ52F120A

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