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74LVC08A 데이터시트(PDF) 5 Page - ON Semiconductor

부품명 74LVC08A
상세설명  Low-Voltage CMOS Quad 2-Input NAND Gate
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
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74LVC08A 데이터시트(HTML) 5 Page - ON Semiconductor

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74LVC08A
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AC ELECTRICAL CHARACTERISTICS (tR = tF = 2.5 ns)
Symbol
Parameter
Conditions
−40
5C to +855C
−40
5C to +1255C
Unit
Min
Typ1
Max
Min
Typ1
Max
tpd
Propagation Delay (Note 5)
VCC = 1.2 V
11.0
ns
VCC = 1.65 V to 1.95 V
0.5
4.2
9.0
0.5
10.4
ns
VCC = 2.3 V to 2.7 V
1.0
2.5
6.9
1.0
8.0
VCC = 2.7 V
1.5
2.5
4.8
1.5
5.6
VCC = 3.0 V to 3.6 V
1.0
2.3
4.1
1.0
4.8
tsk(0)
Output Skew Time (Note 6)
VCC = 3.0 V to 3.6 V
1.0
1.5
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Typical values are measured at TA = 25
°C and VCC = 3.3 V, unless stated otherwise.
5. tpd is the same as tPLH and tPHL.
6. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.
The specification applies to any outputs switching in the same direction, either HIGH−to−LOW (tOSHL) or LOW−to−HIGH (tOSLH); parameter
guaranteed by design.
DYNAMIC SWITCHING CHARACTERISTICS
Symbol
Characteristic
Condition
TA = +25°C
Unit
Min
Typ
Max
VOLP
Dynamic LOW Peak Voltage (Note 7)
VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V
VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V
0.8
0.6
V
VOLV
Dynamic LOW Valley Voltage (Note 7)
VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V
VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V
−0.8
−0.6
V
7. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is
measured in the LOW state.
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
Condition
Typical
Unit
CIN
Input Capacitance
VCC = 3.3 V, VI = 0 V or VCC
4.0
pF
COUT
Output Capacitance
VCC = 3.3 V, VI = 0 V or VCC
5.0
pF
CPD
Power Dissipation Capacitance
(Note 8)
Per input; VI = GND or VCC
pF
VCC = 1.65 V to 1.95 V
4.4
VCC = 2.3 V to 2.7 V
7.7
VCC = 3.0 V to 3.6 V
10.5
8. CPD is used to determine the dynamic power dissipation (PD in mW).
PD = CPD x VCC2 x fi x N + S (CL x VCC2 x fo) where:
fi = input frequency in MHz; fo = output frequency in MHz
CL = output load capacitance in pF VCC = supply voltage in Volts
N = number of outputs switching
S(CL x VCC2 x fo) = sum of the outputs.


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