전자부품 데이터시트 검색엔진 |
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STK830FC 데이터시트(PDF) 3 Page - AUK corp |
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STK830FC 데이터시트(HTML) 3 Page - AUK corp |
3 / 8 page KST-H017-000 3 STK830FC Electrical Characteristics (Tc=25°C unless otherwise specified) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-Source breakdown voltage BVDSS ID=250µA, VGS=0 500 V Gate-Threshold voltage VGS(th) ID=250µA, VDS=5V 2.0 4.0 V Drain-source leakage current IDSS VDS=500V 10 µA Gate-source leakage IGSS VDS=0V, VGS=±30V ±100 nA Drain-Source on-resistance ④ RDS(ON) VGS=10V, ID=2.25A 1.5 Ω Forward transconductance ④ gfs VDS=50V, ID=2.25A 3.87 S Input capacitance Ciss 760 900 Output capacitance Coss 85 100 Reverse transfer capacitance Crss VGS=0V, VDS=25V, f=1MHz 15 22 pF Turn-on delay time td(on) 15 40 Rise time tr 16 40 Turn-off delay time td(off) 66 140 Fall time tf VDD=250V,ID=4.5A RG=12Ω ④⑤ 22 55 ns Total gate charge Qg 33 43 Gate-source charge Qgs 4.4 Gate-drain(“Miller”)charge Qgd VDS=400V,VGS=10V, ID=4.5A ④⑤ 16.6 nC Source-Drain Diode Ratings and Characteristics Characteristic Symbol Test Condition Min Typ Max Units Continuous source current IS 4.5 Pulsed-source current ① ISM Integral reverse pn-diode in the MOSFET 18 A Diode forward voltage ④ VSD TJ=25℃, VGS=0V, IS=4.5A 1.4 V Reverse recovery time trr 285 ns Reverse recovery charge Qrr TJ=25℃,IF=4.5A diF/dt=100A/us ④ 2.0 uC Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=30mH, IAS=4.5A, VDD=50V, RG=27Ω , starting TJ=25℃ ③ ISD ≤ 4.5A, di/dt≤ 130A/us, VDD≤ BVDSS, starting TJ=25℃ ④ Pulse Test : Pulse Width=250us, Duty cycle≤ 2% ⑤ Essentially independent of operating temperature |
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