MMSF7N03Z datasheet(2/11 Pages) ONSEMI

부품명	MMSF7N03Z

상세설명	N?묬hannel SO?? Power MOSFET

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MMSF7N03Z

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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

30

Vdc

Drain−to−Gate Voltage (RGS = 1.0 MΩ)

VDGR

30

Vdc

Gate−to−Source Voltage − Continuous

VGS

± 15

Vdc

Drain Current

− Continuous @ TA = 25°C (Note 1)

− Continuous @ TA = 70°C (Note 1)

− Pulsed Drain Current (Note 3)

ID

IDM

7.5

5.6

60

Adc

Apk

Total Power Dissipation @ TA = 25°C (Note 1)

Linear Derating Factor (Note 1)

PD

2.5

20

Watts

mW/°C

Total Power Dissipation @ TA = 25°C (Note 2)

Linear Derating Factor (Note 2)

PD

1.6

12

Watts

mW/°C

Operating and Storage Temperature Range

TJ, Tstg

− 55 to 150

°C

Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C

(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 15 Apk, L = 4.0 mH, RG = 25 Ω)

EAS

450

mJ

Thermal Resistance

− Junction to Ambient (Note 1)

− Junction to Ambient (Note 2)

RθJA

50

80

°C/W

1. When mounted on 1″ square FR−4 or G−10 board (VGS = 10 V, @ 10 Seconds)

2. When mounted on 1″ square FR−4 or G−10 board (VGS = 10 V, @ Steady State)

3. Repetitive rating; pulse width limited by maximum junction temperature.

유사한 부품 번호 - MMSF7N03Z

제조업체	부품명	데이터시트	상세설명
Motorola, Inc	MMSF7N03Z	193Kb / 10P	SINGLE TMOS POWER MOSFET 7.5 AMPERES 30 VOLTS

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MMSF7N03Z 데이터시트(PDF) 2 Page - ON Semiconductor

MMSF7N03Z 데이터시트(HTML) 2 Page - ON Semiconductor

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