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MMSF7N03Z 데이터시트(PDF) 2 Page - ON Semiconductor |
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2 / 11 page MMSF7N03Z http://onsemi.com 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 30 Vdc Drain−to−Gate Voltage (RGS = 1.0 MΩ) VDGR 30 Vdc Gate−to−Source Voltage − Continuous VGS ± 15 Vdc Drain Current − Continuous @ TA = 25°C (Note 1) − Continuous @ TA = 70°C (Note 1) − Pulsed Drain Current (Note 3) ID ID IDM 7.5 5.6 60 Adc Apk Total Power Dissipation @ TA = 25°C (Note 1) Linear Derating Factor (Note 1) PD 2.5 20 Watts mW/°C Total Power Dissipation @ TA = 25°C (Note 2) Linear Derating Factor (Note 2) PD 1.6 12 Watts mW/°C Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 15 Apk, L = 4.0 mH, RG = 25 Ω) EAS 450 mJ Thermal Resistance − Junction to Ambient (Note 1) − Junction to Ambient (Note 2) RθJA 50 80 °C/W 1. When mounted on 1″ square FR−4 or G−10 board (VGS = 10 V, @ 10 Seconds) 2. When mounted on 1″ square FR−4 or G−10 board (VGS = 10 V, @ Steady State) 3. Repetitive rating; pulse width limited by maximum junction temperature. |
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