BC847S datasheet(2/6 Pages) INFINEON

부품명	BC847S

상세설명	NPN Silicon AF Transistor Array

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BC847S

Nov-29-2001

2

Electrical Characteristics

at TA=25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics per Transistor

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

V(BR)CEO

45

-

V

Collector-base breakdown voltage

IC = 10 µA, IE = 0

V(BR)CBO

50

-

Collector-emitter breakdown voltage

IC = 10 µA, VBE = 0

V(BR)CES

50

-

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

6

-

Collector cutoff current

VCB = 30 V, IE = 0

ICBO

-

15

nA

Collector cutoff current

VCB = 30 V, IE = 0 , TA = 150 °C

ICBO

-

5

µA

DC current gain 1)

IC = 10 µA, VCE = 5 V

IC = 2 mA, VCE = 5 V

hFE

-

200

250

290

-

630

-

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

-

90

200

250

650

mV

Base-emitter saturation voltage 1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

-

700

900

-

Base-emitter voltage 1)

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

VBE(ON)

580

-

660

-

700

770

1) Pulse test: t < 300

s; D < 2%

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Siemens Semiconductor G...	BC847S	156Kb / 6P	NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain)
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유사한 설명 - BC847S

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Infineon Technologies A...	BC817UPN	530Kb / 7P	NPN Silicon AF Transistor Array 2011-09-15
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BC847S 데이터시트(PDF) 2 Page - Infineon Technologies AG

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유사한 부품 번호 - BC847S

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