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BCW60D 데이터시트(PDF) 2 Page - Infineon Technologies AG |
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BCW60D 데이터시트(HTML) 2 Page - Infineon Technologies AG |
2 / 9 page BCW60, BCX70 2 Jan-29-2002 Maximum Ratings Parameter Symbol BCW60 BCW60FF BCX70 Unit Collector-emitter voltage VCEO 32 32 45 V Collector-base voltage VCBO 32 32 45 Emitter-base voltage VEBO 5 5 5 DC collector current IC 100 mA Peak collector current ICM 200 Peak base current IBM 200 Total power dissipation , TS = 71 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 240 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCW60/60FF BCX70 V(BR)CEO 32 45 - - - - V Collector-base breakdown voltage IC = 10 µA, IB = 0 BCW60/60FF BCX70 V(BR)CBO 32 45 - - - - Emitter-base breakdown voltage IE = 1 µA, IC = 0 V(BR)EBO 5 - - 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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