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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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BUZ30A 데이터시트(PDF) 1 Page - Infineon Technologies AG |
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BUZ30A 데이터시트(HTML) 1 Page - Infineon Technologies AG |
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1 / 8 page  BUZ 30A Data Sheet 1 06.99 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 30A 200 V 21 A 0.13 Ω TO-220 AB C67078-S1303-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 26 ˚C ID 21 A Pulsed drain current TC = 25 ˚C IDpuls 84 Avalanche current,limited by Tjmax IAR 21 Avalanche energy,periodic limited by Tjmax EAR 12 mJ Avalanche energy, single pulse ID = 21 A, VDD = 50 V, RGS = 25 Ω L = 1.53 mH, Tj = 25 ˚C EAS 450 Gate source voltage VGS ± 20 V Power dissipation TC = 25 ˚C Ptot 125 W Operating temperature Tj -55 ... + 150 ˚C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 1 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 |
유사한 부품 번호 - BUZ30A |
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유사한 설명 - BUZ30A |
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