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STP10N65K3 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STP10N65K3
상세설명  N-channel 650 V, 0.75typ., 10 A SuperMESH3??Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages
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STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3
Electrical characteristics
21
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
ISD
Source-drain current
-
7.2
A
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
28.8
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 7 A, VGS = 0
-
1.5
V
trr
Reverse recovery time
ISD = 7 A, di/dt = 100A/µs
VDD = 60 V (see Figure 22)
-320
ns
Qrr
Reverse recovery charge
-
2
µC
IRRM
Reverse recovery current
-
13
A
trr
Reverse recovery time
ISD = 7 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 22)
-410
ns
Qrr
Reverse recovery charge
-
2.9
µC
IRRM
Reverse recovery current
-
14
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min
Typ.
Max.
Unit
V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0
30
-
-
V


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