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STGB10M65DF2 데이터시트(PDF) 1 Page - STMicroelectronics |
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1 / 20 page October 2015 DocID027429 Rev 5 1/20 This is information on a product in full production. www.st.com STGB10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low loss Datasheet - production data Figure 1: Internal schematic diagram Features 6 µs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 10 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor control UPS PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where low loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGB10M65DF2 G10M65DF2 D²PAK Tape and reel 1 3 TAB D2PAK |
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