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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRL60SL216 데이터시트(PDF) 3 Page - Infineon Technologies AG |
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IRL60SL216 데이터시트(HTML) 3 Page - Infineon Technologies AG |
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3 / 12 page  3 2016-1-19 IRL60S/SL216 D S G Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 229 ––– ––– S VDS = 10V, ID = 100A Qg Total Gate Charge ––– 170 255 ID = 100A Qgs Gate-to-Source Charge ––– 53 ––– VDS = 30V Qgd Gate-to-Drain Charge ––– 80 ––– VGS = 4.5V Qsync Total Gate Charge Sync. (Qg– Qgd) ––– 90 ––– td(on) Turn-On Delay Time ––– 70 ––– ns VDD = 30V tr Rise Time ––– 180 ––– ID = 30A td(off) Turn-Off Delay Time ––– 190 ––– RG= 2.7 tf Fall Time ––– 120 ––– VGS = 4.5V Ciss Input Capacitance ––– 15330 ––– pF VGS = 0V Coss Output Capacitance ––– 1260 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 890 ––– ƒ = 1.0MHz, See Fig.7 Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 1260 ––– VGS = 0V, VDS = 0V to 48V Coss eff.(TR) Output Capacitance (Time Related) ––– 1640 ––– VGS = 0V, VDS = 0V to 48V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 298 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 780 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C,IS =100A,VGS = 0V dv/dt Peak Diode Recovery dv/dt ––– 9.5 ––– V/ns TJ = 175°C,IS = 100A,VDS = 60V trr Reverse Recovery Time ––– 52 ––– ns TJ = 25°C VDD = 51V ––– 54 ––– TJ = 125°C IF = 100A, Qrr Reverse Recovery Charge ––– 87 ––– nC TJ = 25°C di/dt = 100A/µs ––– 97 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 2.9 ––– A TJ = 25°C nC |
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