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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRF5305L 데이터시트(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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IRF5305L 데이터시트(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
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2 / 10 page  IRF5305L V DD = -25V, Starting TJ = 25°C, L = 2.1mH RG = 25Ω, IAS = -16A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Notes: I SD ≤ -16A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRF5305 data and test conditions Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -55 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.034 ––– V/°C Reference to 25°C, ID = -1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.06 Ω VGS = -10V, ID = -16A VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 8.0 ––– ––– S VDS = -25V, ID = -16A ––– ––– -25 µA VDS = -55V, VGS = 0V ––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 63 ID = -16A Qgs Gate-to-Source Charge ––– ––– 13 nC VDS = -44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 29 VGS = -10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 14 ––– VDD = -28V tr Rise Time ––– 66 ––– ID = -16A td(off) Turn-Off Delay Time ––– 39 ––– RG = 6.8Ω tf Fall Time ––– 63 ––– RD = 1.6Ω, See Fig. 10
Between lead, ––– ––– and center of die contact Ciss Input Capacitance ––– 1200 ––– VGS = 0V Coss Output Capacitance ––– 520 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 250 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS ns IDSS Drain-to-Source Leakage Current nH 7.5 LS Internal Source Inductance Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.3 V TJ = 25°C, IS = -16A, VGS = 0V trr Reverse Recovery Time ––– 71 110 ns TJ = 25°C, IF = -16A Qrr Reverse Recovery Charge ––– 170 250 nC di/dt = -100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A S D G -31 -110 2014-8-30 2 www.kersemi.com |
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