전자부품 데이터시트 검색엔진 |
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IRF9540S 데이터시트(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
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IRF9540S 데이터시트(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
2 / 8 page IRF9540S, SiHF9540S Note a. When mounted on 1" square PCB (FR-4 or G-10 material). Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient (PCB Mount)a RthJA -- 40 °C/W Maximum Junction-to-Case (Drain) RthJC -- 1.0 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0, ID = - 250 μA - 100 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.087 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 100 V, VGS = 0 V - - - 100 μA VDS = - 80 V, VGS = 0 V, TJ = 150 °C - - - 500 Drain-Source On-State Resistance RDS(on) VGS = - 10 V ID = - 11 Ab - - 0.20 Forward Transconductance gfs VDS = - 50 V, ID = - 11 A 6.2 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 - 1400 - pF Output Capacitance Coss - 590 - Reverse Transfer Capacitance Crss - 140 - Total Gate Charge Qg VGS = - 10 V ID = - 19 A, VDS = - 80 V, see fig. 6 and 13b -- 61 nC Gate-Source Charge Qgs -- 14 Gate-Drain Charge Qgd -- 29 Turn-On Delay Time td(on) VDD = - 50 V, ID = - 19 A, RG = 9.1 , RD = 2.4 , see fig. 10b -16 - ns Rise Time tr -73 - Turn-Off Delay Time td(off) -34 - Fall Time tf -57 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- - 19 A Pulsed Diode Forward Currenta ISM -- - 72 Body Diode Voltage VSD TJ = 25 °C, IS = - 19 A, VGS = 0 Vb -- - 5.0 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = - 19 A, dI/dt = 100 A/μsb - 130 260 ns Body Diode Reverse Recovery Charge Qrr - 0.35 0.70 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G 2014-8-28 2 www.kersemi.com |
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