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SPI80N04S2-H4 데이터시트(PDF) 3 Page - Infineon Technologies AG |
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SPI80N04S2-H4 데이터시트(HTML) 3 Page - Infineon Technologies AG |
3 / 8 page 2003-05-08 Page 3 SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=80A 53 105 - S Input capacitance Ciss VGS=0V, VDS =25V, f=1MHz - 4430 5890 pF Output capacitance Coss - 1580 2100 Reverse transfer capacitance Crss - 400 600 Turn-on delay time td(on) VDD=20V, VGS =10V, ID=80A, RG=1.3Ω - 14 21 ns Rise time tr - 36 54 Turn-off delay time td(off) - 46 69 Fall time tf - 35 53 Gate Charge Characteristics Gate to source charge Qgs VDD=32V, ID=80A - 22 29 nC Gate to drain charge Qgd - 47 70 Gate charge total Qg VDD=32V, ID=80A, VGS=0 to 10V - 111 148 Gate plateau voltage V(plateau) VDD = 32 V , ID=80A - 5.2 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 80 A Inv. diode direct current, pulsed ISM - - 320 Inverse diode forward voltage VSD VGS=0V, IF=80A - 0.9 1.3 V Reverse recovery time trr VR=20V, IF=lS, diF/dt=100A/µs - 195 240 ns Reverse recovery charge Qrr - 370 460 nC |
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