전자부품 데이터시트 검색엔진 |
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SPI80N06S2-07 데이터시트(PDF) 1 Page - Infineon Technologies AG |
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SPI80N06S2-07 데이터시트(HTML) 1 Page - Infineon Technologies AG |
1 / 8 page 2003-05-09 Page 1 SPI80N06S2-07 SPP80N06S2-07,SPB80N06S2-07 OptiMOS® Power-Transistor Product Summary VDS 55 V RDS(on) 6.6 m Ω ID 80 A Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated P- TO263 -3-2 P- TO262 -3-1 P- TO220 -3-1 Marking 2N0607 2N0607 2N0607 Type Package Ordering Code SPP80N06S2-07 P- TO220 -3-1 Q67060-S6024 SPB80N06S2-07 P- TO263 -3-2 Q67060-S6026 SPI80N06S2-07 P- TO262 -3-1 Q67060-S6037 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current 1) TC=25°C ID 80 80 A Pulsed drain current TC=25°C ID puls 320 Avalanche energy, single pulse ID=80A, VDD=25V, RGS=25Ω EAS 530 mJ Repetitive avalanche energy, limited by Tjmax2) EAR 25 Reverse diode dv/dt IS=80A, VDS=44V, di/dt=200A/µs, Tjmax=175°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 250 W Operating and storage temperature Tj , Tstg -55... +175 °C IEC climatic category; DIN IEC 68-1 55/175/56 |
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