전자부품 데이터시트 검색엔진 |
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SPI11N65C3 데이터시트(PDF) 6 Page - Infineon Technologies AG |
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SPI11N65C3 데이터시트(HTML) 6 Page - Infineon Technologies AG |
6 / 14 page 2003-0 8-15 Page 6 SPP11N65C3, SPA11N65C3 SPI11N65C3 5 Transient thermal impedance FullPAK ZthJC = f (tp) parameter: D = tp/t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s tp -4 10 -3 10 -2 10 -1 10 0 10 1 10 K/W D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 6 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS 0 3 6 9 12 15 18 21 V 27 VDS 0 4 8 12 16 20 24 28 32 A 40 4,5V 5V 5,5V 6V 6,5V 7V 20V 10V 8V 7 Typ. output characteristic ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS 0 5 10 15 V 25 VDS 0 2 4 6 8 10 12 14 16 18 A 22 4V 4.5V 5V 5.5V 6V 20V 8V 7V 7.5V 8 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150°C, VGS 0 2 4 6 8 10 12 14 16 A 20 ID 0.4 0.6 0.8 1 1.2 1.4 1.6 Ω 2 4V 4.5V 5V 5.5V 6V 6.5V 8V 20V |
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