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SPI20N65C3 데이터시트(PDF) 4 Page - Infineon Technologies AG |
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SPI20N65C3 데이터시트(HTML) 4 Page - Infineon Technologies AG |
4 / 14 page 2003-0 8-15 Page 4 SPP20N65C3, SPA20N65C3 SPI20N65C3 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous forward current IS TC=25°C - - 20.7 A Inverse diode direct current, pulsed ISM - - 62.1 Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=480V, IF=IS , diF/dt=100A/µs - 500 800 ns Reverse recovery charge Qrr - 11 - µC Peak reverse recovery current Irrm - 70 - A Peak rate of fall of reverse recovery current dirr/dt Tj=25°C - 1400 - A/µs Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit SPA SPA Rth1 0.00769 0.00769 K/W Cth1 0.0003763 0.0003763 Ws/K Rth2 0.015 0.015 Cth2 0.001411 0.001411 Rth3 0.029 0.029 Cth3 0.001931 0.001931 Rth4 0.114 0.163 Cth4 0.005297 0.005297 Rth5 0.136 0.323 Cth5 0.012 0.008453 Rth6 0.059 2.526 Cth6 0.091 0.412 SPP_B SPP_B External Heatsink Tj Tcase Tamb C th1 Cth2 Rth1 Rth,n Cth,n Ptot (t) |
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유사한 설명 - SPI20N65C3 |
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